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arXiv · 0705.4250

Ultrafast optical switching of three-dimensional Si inverse opal photonic band gap crystals

Tijmen G. Euser·Hong Wei·Jeroen Kalkman·Yoonho Jun·Albert Polman·David J. Norris·Willem L. Vos
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Abstract

We present ultrafast optical switching experiments on 3D photonic band gap crystals. Switching the Si inverse opal is achieved by optically exciting free carriers by a two-photon process. We probe reflectivity in the frequency range of second order Bragg diffraction where the photonic band gap is predicted. We find good experimental switching conditions for free-carrier plasma frequencies between 0.3 and 0.7 times the optical frequency: we thus observe a large frequency shift of up to D omega/omega= 1.5% of all spectral features including the peak that corresponds to the photonic band gap. We deduce a corresponding large refractive index change of Dn'_Si/n'_Si= 2.0% and an induced absorption length that is longer than the sample thickness. We observe a fast decay time of 21 ps, which implies that switching could potentially be repeated at GHz rates. Such a high switching rate is relevant to future switching and modulation applications.

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Tijmen G. Euser, Hong Wei, Jeroen Kalkman, Yoonho Jun, Albert Polman, David J. Norris, Willem L. Vos. 2007-09-19. Ultrafast optical switching of three-dimensional Si inverse opal photonic band gap crystals. https://doi.org/10.1063/1.2777134

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