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arXiv · 0705.3595

Polarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots

M. Winkelnkemper·R. Seguin·S. Rodt·A. Schliwa·L. Reissmann·A. Strittmatter·A. Hoffmann·D. Bimberg
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Abstract

Cathodoluminescence measurements on single InGaN/GaN quantum dots (QDs) are reported. Complex spectra with up to five emission lines per QD are observed. The lines are polarized along the orthogonal crystal directions [1 1 -2 0] and [-1 1 0 0]. Realistic eight-band k.p electronic structure calculations show that the polarization of the lines can be explained by excitonic recombinations involving hole states which are either formed by the A or the B valence band.

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M. Winkelnkemper, R. Seguin, S. Rodt, A. Schliwa, L. Reissmann, A. Strittmatter, A. Hoffmann, D. Bimberg. 2007-05-24. Polarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots. https://doi.org/10.1063/1.2743893

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