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arXiv · 0705.2028

Theory of superfast fronts of impact ionization in semiconductor structures

Pavel Rodin·Ute Ebert·Andrey Minarsky·Igor Grekhov
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Abstract

We present an analytical theory for impact ionization fronts in reversely biased p^{+}-n-n^{+} structures. The front propagates into a depleted n base with a velocity that exceeds the saturated drift velocity. The front passage generates a dense electron-hole plasma and in this way switches the structure from low to high conductivity. For a planar front we determine the concentration of the generated plasma, the maximum electric field, the front width and the voltage over the n base as functions of front velocity and doping of the n base. Theory takes into account that drift velocities and impact ionization coefficients differ between electrons and holes, and it makes quantitative predictions for any semiconductor material possible.

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Pavel Rodin, Ute Ebert, Andrey Minarsky, Igor Grekhov. 2007-05-14. Theory of superfast fronts of impact ionization in semiconductor structures. https://doi.org/10.1063/1.2767378

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