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arXiv · 0705.1123

Spin dependent resonant tunneling through 6 micron diameter double barrier resonant tunneling diode

Z. L. Fang·P. Wu·N. Kundtz·A. M. Chang·X. Y. Liu·J. K. Furdyna
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Abstract

A vertical resonant tunneling diode (RTD) based on the paramagnetic Zn1-x-yMnyCdxSe system has been fabricated with a pillar diameter down to ~ 6 micron. The diode exhibits high quality resonant tunneling characteristics through the electron sub-band of the quantum well at a temperature of 4.2K, where a clear phonon replica was observable in addition to the primary peak. Both peaks show a giant Zeeman splitting in an applied magnetic field. Employing a self-consistent real-time Green's function method, the current-voltage characteristic was simulated, showing good agreement with the measured result.

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Z. L. Fang, P. Wu, N. Kundtz, A. M. Chang, X. Y. Liu, J. K. Furdyna. 2007-05-10. Spin dependent resonant tunneling through 6 micron diameter double barrier resonant tunneling diode. https://doi.org/10.1063/1.2751132

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