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arXiv · 0704.3928

Spin lifetime in silicon in the presence of parasitic electronic effects

Biqin Huang·Douwe J. Monsma·Ian Appelbaum
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Abstract

A hybrid ferromagnet/semiconductor device is used to determine a lower bound on the spin lifetime for conduction electrons in silicon. We use spin precession to self-consistently measure the drift velocity vs. drift field of spin-polarized electrons and use this electronic control to change the transit time between electron injection and detection. A measurement of normalized magnetocurrent as a function of drift velocity is used with a simple exponential-decay model to argue that the lifetime obtained (~2 ns) is artificially lowered by electronic effects and is likely orders of magnitude higher.

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Biqin Huang, Douwe J. Monsma, Ian Appelbaum. 2007-04-30. Spin lifetime in silicon in the presence of parasitic electronic effects. https://doi.org/10.1063/1.2750411

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