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Substrate temperature changes during MBE growth of GaMnAs

V. Novak·K. Olejnik·M. Cukr·L. Smrcka·Z. Remes·J. Oswald
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Abstract

Remarkably big increase of the substrate temperature during the low-temperature MBE growth of GaMnAs layers is observed by means of band gap spectroscopy. It is explained and simulated in terms of changes in the absorption/emission characteristics of the growing layer. Options for the temperature variation damping are discussed.

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V. Novak, K. Olejnik, M. Cukr, L. Smrcka, Z. Remes, J. Oswald. 2007-04-19. Substrate temperature changes during MBE growth of GaMnAs. https://doi.org/10.1063/1.2800798

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