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arXiv · 0704.0216

Ab initio Study of Graphene on SiC

Alexander Mattausch·Oleg Pankratov
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Abstract

Employing density-functional calculations we study single and double graphene layers on Si- and C-terminated 1x1-6H-SiC surfaces. We show that, in contrast to earlier assumptions, the first carbon layer is covalently bonded to the substrate, and cannot be responsible for the graphene-type electronic spectrum observed experimentally. The characteristic spectrum of free-standing graphene appears with the second carbon layer, which exhibits a weak van der Waals bonding to the underlying structure. For Si-terminated substrate, the interface is metallic, whereas on C-face it is semiconducting or semimetallic for single or double graphene coverage, respectively.

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Alexander Mattausch, Oleg Pankratov. 2007-04-16. Ab initio Study of Graphene on SiC. https://doi.org/10.1103/physrevlett.99.076802

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